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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PFa package High voltage;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW13F BUW13AF Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO IN Collector-base voltage PARAMETER l BUW13F BUW13AF BUW13F Open emitter VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current ANG CH BUW13AF SEM E Open base DUC CON I CONDITIONS TOR VALUE 850 1000 400 450 9 15 30 6 9 UNIT V V V A A A A W ae ae Open collector Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX 35 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUW13F VCEO(SUS) Collector-emitter sustaining voltage BUW13AF BUW13F VCEsat Collector-emitter saturation voltage BUW13AF BUW13F VBEsat Base-emitter saturation voltage BUW13AF ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 Tj=125ae VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V IC=8A; IB=1.6A IC=10A; IB=2A IC=10A; IB=2A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW13F BUW13AF SYMBOL MIN 400 TYP. MAX UNIT V 450 1.5 V 1.6 V 1.0 4.0 mA mA Switching times resistive load ton ts tf Turn-on time Storage time HAN INC Fall time SEM GE OND IC 10 10 TOR UC 35 35 1.0 |I |I |I 10 s s s For BUW13F IC=10A ;IB1=-IB2=-2A 4.0 For BUW13AF IC=8A ;IB1=-IB2=-1.6A 0.8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13F BUW13AF SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.30mm) 3 |
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